What are the advantages of gallium oxide as a third-generation semiconductor?

Recently, third-generation compound semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) have received increasing attention, and they will play a very important role in the condition of high-power, high-temperature, high-voltage, which means the traditional accessories of Silicon can not reach. However, SiC and GaN are not the end points. Recently, gallium oxide (Ga2O3) has once again entered the field of vision. With its wider band gap than SiC and GaN, this compound semiconductor has unique advantages in the applications of higher power. Therefore, research on gallium oxide has heated up in recent years.

Gallium oxide is a wide band-gap semiconductor with a forbidden band width of Eg = 4.9 eV, which has a good electrical conductivity and luminescent properties. Therefore, it has broad application prospects in optoelectronic device, and is used as an insulating layer for Ga-based semiconductor materials, as well as an ultraviolet filter. The main advantage of β-Ga2O3 is the band gap, but there are also deficiencies, mainly in the low mobility and thermal conductivity, especially the thermal conductivity is its main short board. However, relatively speaking, these shortcomings do not have much influence on the characteristics of the power device because the performance of the power device mainly depends on the breakdown electric field strength.

In the future, gallium oxide is more likely to play a role in extending the power and voltage range available for ultra-wide bandgap systems. Perhaps the most promising applications are high-voltage rectifiers in power conditioning and distribution systems, such as electric vehicles and photo voltaic solar systems. However, before becoming a major competitor in power electronics, gallium oxide still needs to carry out more research and development and advancement work to overcome its own shortcomings.

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